The diodes are classified into different types based on their working principles and characteristics. A gunn diode is a passive semiconductor device with two terminals, which composes of only an ndoped semiconductor material, unlike other diodes which consist of a pn junction. Stable teo oscillators are most easily designed by mounting a gunn diode in a coaxial cavity or in a waveguide. It is also termed as a transferred electron device. Equipments gunn oscillator, gunn power supply, pin modulator, isolator, frequency meter, variable attenuator, detector mount, waveguide stands, swr meter, cables and. A gunn diode, also known as a transferred electron device ted, is a form of diode, a twoterminal semiconductor electronic component, with negative resistance, used in highfrequency electronics. Gunn diode or ted transferredelectron device type of the semiconductor or vacuum form of diode, which is designed to operate in the range of microwave frequencies from single ghz to single thz. We will observe the negative resistance region on the characteristics of. Pdf based on the field model, a theoretical description of the anode domain in a gunn diode is presented. Gunn diodes can be made from the materials which consist of multiple, initiallyempty, closelyspaced energy valleys in their conduction band like gallium arsenide. Gunn diode working principle and its applications elprocus. The gunn diode operation depends on the fact that it has a voltage controlled negative resistance this being dependent upon the fact that when a voltage is placed across the device, most of the voltage appears across the inner active region. It is a negative differential resistance device also called as transferred electron device oscillator which is a tuned circuit consisting of gunn diode with dc bias voltage applied to it. Gunn as a first person has observed that in the wafers of gallium arsenide with a very small thickness, after supplying.
Gunn diode microwave diode is kind of a type of semiconductor or vacuum. Before going to varactor diode, lets first take a look at the capacitor. Voltagecurrent characteristics turn the meter switch of gunn power supply to voltage position. They are used in radio communication, military and commercial radar sources. Pdf a short tutorial on the gunn diode is presented. On a special case, this article discuss about gunn. Output power and frequency as a function of voltage. These include generic diode, schotty diode, shockley diode, constantcurrent diode, zener diode, light emitting diode, photodiode, tunnel diode, varactor, vacuum tube, laser diode, pin diode, peltier diode, gunn diode, and so on. Gunn diodes are used to build oscillators for generating microwaves with frequencies ranging from 10 ghz to thz. Its largest use is in electronic oscillators to generate microwaves, in applications such as radar speed guns, microwave. The gunn effect can be defined as generation of microwave power power with microwave frequencies of around a few ghz whenever the voltage applied to a.
In this article you will get to know about the working, characteristic curvce, advantages, disadvantages and applications of gunn diode. Varactor diodesvaricap,zener diodes,pin diodes,avalanche diodes,tunnel diodes,step recovery diode,schottky diodes,damper diode,transient voltage suppressor diode. A gunn diode is a passive semiconductor device with two terminals, which composes of only an ndoped. Measure the gunn diode current corresponding to the various voltage controlled by gunn bias knob through the panel meter and meter switch. A gunn diode, also known as a transferred electron device ted, is a form of diode. It was realized that the oscillations he detected were explained by the. In the case of the gunn diode, the gunn effect will be explained in the form of. A microwave oscillator can be created simply by applying a dc voltage to bias the device into its negative resistance region. The gunn diode operation depends on the fact that it has a voltage controlled negative resistance this being dependent upon the fact that when a voltage is.
The gunn diode or transferred electron device can be termed a diode because it has two electrodes. The characteristic of gunn diode is almost similar to the tunnel diode characteristics. Gunn diodes are used as oscillators and amplifiers. It is based on the gunn effect discovered in 1962 by physicist j. Study of iv characteristics of gunn diodes objectives 1. The zener diode is a diode designed to operate in the breakdown region and have a specific negative voltage called the zener voltage. A gunn diode is a semiconductor device formed by only ntype material. Experiment5 study of iv characteristics of gunn diodes. Varactor diode is a pn junction diode whose capacitance is varied by varying the reverse voltage. Varactor diode definition, symbol, construction and.